MTB04N03E3 - параметры транзистора MOSFET, его аналоги, datasheet

MTB04N03E3 Datasheet (PDF)

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Spec. No. : C889E3 Issued Date : 2013.02.20 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB04N03E3 ID 115A3.8m VGS=10V, ID=30A RDSON(TYP) 6.1m VGS=4.5V, ID=24A Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating

6.1. Size:338K cystek
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Spec. No. : C789J3 Issued Date : 2011.12.12 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB04N03J3 ID 75ARDS(ON)@VGS=10V, ID=30A 3.1m(typ) RDS(ON)@VGS=4.5V, ID=24A 4.7m(typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free l

6.2. Size:318K cystek
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Spec. No. : C889Q8 Issued Date : 2013.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03AQ8ID @VGS=10V 20ARDSON@VGS=10V, ID=18A 4.4m(typ) RDSON@VGS=4.5V, ID=12A 5.8m(typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt

6.3. Size:310K cystek
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Spec. No. : C789Q8 Issued Date : 2011.12.16 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB04N03Q8ID 25ARDSON@VGS=10V, ID=18A 3.5m(typ) RDSON@VGS=4.5V, ID=12A 4.8m(typ) Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s