MTB050N15J3 Specs and Replacement
Type Designator: MTB050N15J3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.6 nS
Cossⓘ - Output Capacitance: 144 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0475 Ohm
Package: TO-252
MTB050N15J3 substitution
- MOSFET ⓘ Cross-Reference Search
MTB050N15J3 datasheet
mtb050n15j3.pdf
Spec. No. C979J3 Issued Date 2014.08.14 CYStech Electronics Corp. Revised Date 2014.08.18 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m (typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p... See More ⇒
mtb050p10e3.pdf
Spec. No. C975E3 Issued Date 2014.07.10 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10E3 ID @ VGS=-10V -40A 46m RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching ... See More ⇒
mtb050p10f3.pdf
Spec. No. C975F3 Issued Date 2014.08.13 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -100V MTB050P10F3 ID @ VGS=-10V -40A RDSON(TYP) @ VGS=-10V, ID=-20A 46m RDSON(TYP) @ VGS=-4.5V, ID=-15A 52m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching... See More ⇒
mtb05n03hq8.pdf
Spec. No. C738Q8 Issued Date 2009.08.19 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB05N03HQ8 ID 20A RDSON(max) 5m Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒
Detailed specifications: MTB030N04N3, MTB032P06V8, MTB03N03H8, MTB04N03AQ8, MTB04N03E3, MTB04N03H8, MTB04N03J3, MTB04N03Q8, 20N60, MTB050P10E3, MTB050P10F3, MTB05N03HQ8, MTB060N06I3, MTB060N15J3, MTB06N03E3, MTB06N03H8, MTB06N03I3
Keywords - MTB050N15J3 MOSFET specs
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