MTB070N11J3 Specs and Replacement

Type Designator: MTB070N11J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm

Package: TO-252

MTB070N11J3 substitution

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MTB070N11J3 datasheet

 ..1. Size:312K  cystek
 mtb070n11j3.pdf pdf_icon

MTB070N11J3

Spec. No. C932J3 Issued Date 2013.10.30 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 110V MTB070N11J3 ID 15A RDS(ON)@VGS=10V, ID=15A 82 m (typ) RDS(ON)@VGS=4.5V, ID=10A 81 m (typ) Features Low on resistance Simple drive requirement Low gate charge Fast switching characteristic ... See More ⇒

 8.1. Size:369K  cystek
 mtb070p15j3.pdf pdf_icon

MTB070N11J3

Spec. No. C985J3 Issued Date 2015.01.21 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTB070P15J3 ID@VGS=-10V, TC=25 C -21A ID@VGS=-10V, TA=25 C -3.7A RDS(ON)@VGS=-10V, ID=-5.2A 65m (typ) RDS(ON)@VGS=-4.5V, ID=-5A 69m (typ) Features Single Drive Requirement Low On-resistance Fast sw... See More ⇒

Detailed specifications: MTB060N06I3, MTB060N15J3, MTB06N03E3, MTB06N03H8, MTB06N03I3, MTB06N03J3, MTB06N03Q8, MTB06N03V8, AO3400, MTB08N04J3, MTB090N06I3, MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.