All MOSFET. MTB08N04J3 Datasheet

 

MTB08N04J3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB08N04J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 13.4 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO-252

 MTB08N04J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB08N04J3 Datasheet (PDF)

 ..1. Size:363K  cystek
 mtb08n04j3.pdf

MTB08N04J3 MTB08N04J3

Spec. No. : C892J3 Issued Date : 2014.05.29 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB08N04J3 ID @VGS=10V 60ARDS(ON)@VGS=10V, ID=15A 5.4m(typ) RDS(ON)@VGS=5V, ID=10A 9.0m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent C

 9.1. Size:371K  cystek
 mtb080n15j3.pdf

MTB08N04J3 MTB08N04J3

Spec. No. : C987J3 Issued Date : 2015.02.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150VMTB080N15J3 ID @VGS=10V, TC=25C 18A RDS(ON)@VGS=10V, ID=10A 82.3m(typ) RDS(ON)@VGS=4.5V, ID=10A 85.8m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free pack

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HM50N03K

 

 
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