MTB08N04J3 Specs and Replacement

Type Designator: MTB08N04J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.4 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: TO-252

MTB08N04J3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB08N04J3 datasheet

 ..1. Size:363K  cystek
 mtb08n04j3.pdf pdf_icon

MTB08N04J3

Spec. No. C892J3 Issued Date 2014.05.29 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB08N04J3 ID @VGS=10V 60A RDS(ON)@VGS=10V, ID=15A 5.4m (typ) RDS(ON)@VGS=5V, ID=10A 9.0m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent C... See More ⇒

 9.1. Size:371K  cystek
 mtb080n15j3.pdf pdf_icon

MTB08N04J3

Spec. No. C987J3 Issued Date 2015.02.03 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB080N15J3 ID @VGS=10V, TC=25 C 18A RDS(ON)@VGS=10V, ID=10A 82.3m (typ) RDS(ON)@VGS=4.5V, ID=10A 85.8m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free pack... See More ⇒

Detailed specifications: MTB060N15J3, MTB06N03E3, MTB06N03H8, MTB06N03I3, MTB06N03J3, MTB06N03Q8, MTB06N03V8, MTB070N11J3, IRFB4227, MTB090N06I3, MTB090N06N3, MTB09N03H8, MTB09N03V8, MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3

Keywords - MTB08N04J3 MOSFET specs

 MTB08N04J3 cross reference

 MTB08N04J3 equivalent finder

 MTB08N04J3 pdf lookup

 MTB08N04J3 substitution

 MTB08N04J3 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs