MTB14P03Q8
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB14P03Q8
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 56
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 1612
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
SOP-8
MTB14P03Q8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB14P03Q8
Datasheet (PDF)
..1. Size:171K cystek
mtb14p03q8.pdf
Spec. No. : C452Q8 Issued Date : 2009.05.13 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTB14P03Q8 ID -12ARDSON(max) 14m Description The MTB14P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost
9.1. Size:351K cystek
mtb14a03v8.pdf
Spec. No. : C397V8 Issued Date : 2013.08.16 CYStech Electronics Corp.Revised Date : 2013.09.26 Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB14A03V8ID 8.5A11.2m VGS=10V, ID=6A RDSON(TYP) 16m VGS=4.5V, ID=4A Description The MTB14A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3 3 package, providing the desi
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