MTB14P03Q8 Datasheet and Replacement
Type Designator: MTB14P03Q8
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 1612 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP-8
MTB14P03Q8 substitution
MTB14P03Q8 Datasheet (PDF)
mtb14p03q8.pdf
Spec. No. : C452Q8 Issued Date : 2009.05.13 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTB14P03Q8 ID -12ARDSON(max) 14m Description The MTB14P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost
mtb14a03v8.pdf
Spec. No. : C397V8 Issued Date : 2013.08.16 CYStech Electronics Corp.Revised Date : 2013.09.26 Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30VMTB14A03V8ID 8.5A11.2m VGS=10V, ID=6A RDSON(TYP) 16m VGS=4.5V, ID=4A Description The MTB14A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3 3 package, providing the desi
Datasheet: MTB11N03Q8 , MTB12N03J3 , MTB12N03Q8 , MTB12N04J3 , MTB12P04J3 , MTB12P06J3 , MTB13N03Q8 , MTB14A03V8 , K3569 , MTB15P04J3 , MTB16P04J3 , MTB17A03Q8 , MTB17A03V8 , MTB17N03Q8 , MTB1D7N03ATH8 , MTB1D7N03E3 , MTB1K6N06KS6R .
Keywords - MTB14P03Q8 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: 2SK3430-S | STP95N04
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