All MOSFET. MTB20N03Q8 Datasheet

 

MTB20N03Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB20N03Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 10.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0136 Ohm
   Package: SOP-8

 MTB20N03Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB20N03Q8 Datasheet (PDF)

 ..1. Size:331K  cystek
 mtb20n03q8.pdf

MTB20N03Q8 MTB20N03Q8

Spec. No. : C396Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2014.02.14 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03Q8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 22.3 m(typ) Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best c

 6.1. Size:367K  cystek
 mtb20n03aq8.pdf

MTB20N03Q8 MTB20N03Q8

Spec. No. : C737Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.03.01 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03AQ8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m(typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

 7.1. Size:366K  cystek
 mtb20n04j3.pdf

MTB20N03Q8 MTB20N03Q8

Spec. No. : C978J3 Issued Date : 2015.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB20N04J3 ID@VGS=10V, TC=25C 23A ID@VGS=10V, TC=100C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package

 7.2. Size:498K  cystek
 mtb20n06kj3.pdf

MTB20N03Q8 MTB20N03Q8

Spec. No. : C103J3 Issued Date : 2015.12.31 CYStech Electronics Corp. Revised Date : 2018.04.12 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06KJ3 ID@VGS=10V, TC=25C 38A ID@VGS=10V, TA=25C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m(typ)Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m(typ)RDS(ON)@VGS=4V, ID=4A 17.2 m(typ) Low On Resistance

 7.3. Size:312K  cystek
 mtb20n06j3.pdf

MTB20N03Q8 MTB20N03Q8

Spec. No. : C925J3 Issued Date : 2013.08.13 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06J3 ID 42ARDS(ON)@VGS=10V, ID=20A 14.6 m(typ)RDS(ON)@VGS=4.5V, ID=20A 16.7 m(typ)Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

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History: SRT15N750LM | SI3443DVPBF | SDF75NA20GBN | 2SK3192 | IPG20N06S4L-26

 

 
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