MTB30N06V8 Specs and Replacement

Type Designator: MTB30N06V8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: DFN3X3

MTB30N06V8 substitution

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MTB30N06V8 datasheet

 ..1. Size:324K  cystek
 mtb30n06v8.pdf pdf_icon

MTB30N06V8

Spec. No. C699V8 Issued Date 2012.03.20 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB30N06V8 ID 6.8A VGS=10V, ID=6.8A 24m RDSON(TYP) VGS=4.5V, ID=4A 28m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline ... See More ⇒

 5.1. Size:262K  motorola
 mtb30n06vlrev4.pdf pdf_icon

MTB30N06V8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou... See More ⇒

 5.2. Size:227K  motorola
 mtb30n06vl.pdf pdf_icon

MTB30N06V8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30N06VL/D Designer's Data Sheet MTB30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.050 OHM area product abou... See More ⇒

 6.1. Size:281K  cystek
 mtb30n06j3.pdf pdf_icon

MTB30N06V8

Spec. No. C699J3 Issued Date 2012.05.16 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB30N06J3 ID 22A RDS(ON)@VGS=10V, ID=18A 27m (typ) RDS(ON)@VGS=4.5V, ID=10A 31m (typ) Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compli... See More ⇒

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Detailed specifications: MTB23C04J4, MTB24B03Q8, MTB25A04Q8, MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8, IRF1407, MTB30P06J3, MTB35N04J3, MTB3D0N03ATH8, MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8

Keywords - MTB30N06V8 MOSFET specs

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