MTB3D0N03ATH8 Specs and Replacement

Type Designator: MTB3D0N03ATH8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 436 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: DFN5X6

MTB3D0N03ATH8 substitution

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MTB3D0N03ATH8 datasheet

 ..1. Size:427K  cystek
 mtb3d0n03ath8.pdf pdf_icon

MTB3D0N03ATH8

Spec. No. C943H8 Issued Date 2014.03.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB3D0N03ATH8 BVDSS 30V ID 75A RDS(ON)@VGS=10V, ID=30A 2.9 m (typ) Features RDS(ON)@VGS=4.5V, ID=24A 4.0 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt r... See More ⇒

 5.1. Size:431K  cystek
 mtb3d0n03bh8.pdf pdf_icon

MTB3D0N03ATH8

Spec. No. C999H8 Issued Date 2015.03.10 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB3D0N03BH8 BVDSS 30V ID@VGS=10V, TC=25 C 60A ID@VGS=10V, TA=25 C 19.2A Features RDS(ON)@VGS=10V, ID=30A 2.5 m (typ) Single Drive Requirement RDS(ON)@VGS=4.5V, ID=24A 3.5 m (typ) Low On-resistance Fast... See More ⇒

Detailed specifications: MTB25N04J3, MTB25P04V8, MTB25P06FP, MTB30N06J3, MTB30N06Q8, MTB30N06V8, MTB30P06J3, MTB35N04J3, 5N60, MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3, MTB45A06Q8, MTB45P03Q8

Keywords - MTB3D0N03ATH8 MOSFET specs

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