All MOSFET. MTB44P04J3 Datasheet

 

MTB44P04J3 Datasheet and Replacement


   Type Designator: MTB44P04J3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-252
 

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MTB44P04J3 Datasheet (PDF)

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MTB44P04J3

Spec. No. : C454J3 Issued Date : 2009.03.11 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -40VMTB44P04J3 ID -12A44m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB44P04J3 TO-252 GGate DDrain G D S S

Datasheet: MTB30P06J3 , MTB35N04J3 , MTB3D0N03ATH8 , MTB40N06E3 , MTB40P04J3 , MTB40P06J3 , MTB40P06Q8 , MTB40P06V8 , STF13NM60N , MTB45A06Q8 , MTB45P03Q8 , MTB4D0N03ATH8 , MTB4D0N03ATV8 , MTB55N03J3 , MTB55N03N3 , MTB55N06Q8 , MTB55N10J3 .

History: APT8018L2VFRG | IRFSL4620PBF

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