MTB4D0N03ATH8 Specs and Replacement

Type Designator: MTB4D0N03ATH8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 299 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: DFN5X6

MTB4D0N03ATH8 substitution

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MTB4D0N03ATH8 datasheet

 ..1. Size:419K  cystek
 mtb4d0n03ath8.pdf pdf_icon

MTB4D0N03ATH8

Spec. No. C441H8 Issued Date 2014.05.26 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03ATH8 BVDSS 30V ID @VGS=10V 66A RDS(ON)@VGS=10V, ID=30A 5.3 m (typ) Features RDS(ON)@VGS=4.5V, ID=20A 7.5 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic... See More ⇒

 3.1. Size:635K  cystek
 mtb4d0n03atv8.pdf pdf_icon

MTB4D0N03ATH8

Spec. No. C441V8 Issued Date 2014.05.22 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03ATV8 BVDSS 30V ID @ VGS=10V 15A VGS=10V, ID=15A 4.7m RDSON(TYP) Features VGS=4.5V, ID=12A 6.7m Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt ... See More ⇒

Detailed specifications: MTB40N06E3, MTB40P04J3, MTB40P06J3, MTB40P06Q8, MTB40P06V8, MTB44P04J3, MTB45A06Q8, MTB45P03Q8, IRFZ24N, MTB4D0N03ATV8, MTB55N03J3, MTB55N03N3, MTB55N06Q8, MTB55N10J3, MTB55N10Q8, MTB600N03N3, MTB60A06Q8

Keywords - MTB4D0N03ATH8 MOSFET specs

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