MTB4D0N03ATH8 Datasheet and Replacement
Type Designator: MTB4D0N03ATH8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 299 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: DFN5X6
MTB4D0N03ATH8 substitution
MTB4D0N03ATH8 Datasheet (PDF)
mtb4d0n03ath8.pdf
Spec. No. : C441H8 Issued Date : 2014.05.26 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03ATH8BVDSS 30VID @VGS=10V 66ARDS(ON)@VGS=10V, ID=30A 5.3 m(typ)Features RDS(ON)@VGS=4.5V, ID=20A 7.5 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic
mtb4d0n03atv8.pdf
Spec. No. : C441V8 Issued Date : 2014.05.22 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03ATV8 BVDSS 30V ID @ VGS=10V 15A VGS=10V, ID=15A 4.7m RDSON(TYP) Features VGS=4.5V, ID=12A 6.7m Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt
Datasheet: MTB40N06E3 , MTB40P04J3 , MTB40P06J3 , MTB40P06Q8 , MTB40P06V8 , MTB44P04J3 , MTB45A06Q8 , MTB45P03Q8 , IRFZ24N , MTB4D0N03ATV8 , MTB55N03J3 , MTB55N03N3 , MTB55N06Q8 , MTB55N10J3 , MTB55N10Q8 , MTB600N03N3 , MTB60A06Q8 .
Keywords - MTB4D0N03ATH8 MOSFET datasheet
MTB4D0N03ATH8 cross reference
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MTB4D0N03ATH8 substitution
MTB4D0N03ATH8 replacement
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History: HRP33N04K | STP75N20
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