All MOSFET. MTBA5N10Q8 Datasheet

 

MTBA5N10Q8 Datasheet and Replacement


   Type Designator: MTBA5N10Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.123 Ohm
   Package: SOP-8
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MTBA5N10Q8 Datasheet (PDF)

 ..1. Size:303K  cystek
mtba5n10q8.pdf pdf_icon

MTBA5N10Q8

Spec. No. : C731Q8 Issued Date : 2013.07.19 CYStech Electronics Corp.Revised Date : 2013.11.05 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA5N10Q8 ID 3A123m VGS=10V, ID=3A RDSON(TYP) 130m VGS=4.5V, ID=2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTBA5N1

 6.1. Size:349K  cystek
mtba5n10fp.pdf pdf_icon

MTBA5N10Q8

Spec. No. : C731FP Issued Date : 2012.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTBA5N10FP ID 10ARDS(ON)@VGS=10V, ID=10A 151 m(typ) RDS(ON)@VGS=4.5V, ID=10A 165 m(typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit

 6.2. Size:327K  cystek
mtba5n10v8.pdf pdf_icon

MTBA5N10Q8

Spec. No. : C731V8 Issued Date : 2012.08.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA5N10V8ID 7A133 m VGS=10V, ID=5A RDSON(TYP) 140 m VGS=4.5V, ID=5A Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch

 6.3. Size:250K  cystek
mtba5n10j3.pdf pdf_icon

MTBA5N10Q8

Spec. No. : C731J3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTBA5N10J3 ID 10A150m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTBA5N10J3 TO-252(DPAK)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: ME4856-G | APT97N65B2C6 | S2N7002 | PHP87N03LT | 2N4118A | 2N6661JANTXV

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