MTBA5N10V8 Specs and Replacement

Type Designator: MTBA5N10V8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.133 Ohm

Package: DFN3X3

MTBA5N10V8 substitution

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MTBA5N10V8 datasheet

 ..1. Size:327K  cystek
 mtba5n10v8.pdf pdf_icon

MTBA5N10V8

Spec. No. C731V8 Issued Date 2012.08.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10V8 ID 7A 133 m VGS=10V, ID=5A RDSON(TYP) 140 m VGS=4.5V, ID=5A Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch... See More ⇒

 6.1. Size:349K  cystek
 mtba5n10fp.pdf pdf_icon

MTBA5N10V8

Spec. No. C731FP Issued Date 2012.12.06 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10FP ID 10A RDS(ON)@VGS=10V, ID=10A 151 m (typ) RDS(ON)@VGS=4.5V, ID=10A 165 m (typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit... See More ⇒

 6.2. Size:303K  cystek
 mtba5n10q8.pdf pdf_icon

MTBA5N10V8

Spec. No. C731Q8 Issued Date 2013.07.19 CYStech Electronics Corp. Revised Date 2013.11.05 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10Q8 ID 3A 123m VGS=10V, ID=3A RDSON(TYP) 130m VGS=4.5V, ID=2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol Outline MTBA5N1... See More ⇒

 6.3. Size:250K  cystek
 mtba5n10j3.pdf pdf_icon

MTBA5N10V8

Spec. No. C731J3 Issued Date 2009.07.07 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10J3 ID 10A 150m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline MTBA5N10J3 TO-252(DPAK)... See More ⇒

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Detailed specifications: MTB90P06J3, MTB90P06Q8, MTBA0N10Q8, MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, IRF730, MTBA5Q10Q8, MTBA6C12J4, MTBB0P10J3, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3, MTBC7N10N3, MTC1016S6R

Keywords - MTBA5N10V8 MOSFET specs

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