2N3824LP Datasheet and Replacement
Type Designator: 2N3824LP
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 50 V
|Id|ⓘ - Maximum Drain Current: 0.012 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm
Package: TO46
2N3824LP Datasheet (PDF)
2n3821 2n3822 2n3824.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3820.pdf

2N3820P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage -20 VVG
2n3828.pdf

2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Amplifier TransistorTO-92 G H Emitter Base CollectorJA DCollectorBMillimeterREF. Min. Max.A 4.40 4.70KB 4.30 4.70 C 12.70 - D 3.30 3.81E 0
2n3821 2n3822.pdf

Databook.fxp 1/13/99 2:09 PM Page B-301/99 B-32N3821, 2N3822N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C VHF AmplifiersReverse Gate Source & Reverse Gate Drain Voltage 50 V Small Signal AmplifiersContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2mW/CAt 25C free air temperat
Datasheet: 2N3824 , 2N3824LP , 2N4391 , 2N4391CSM , 2N4392 , 2N4392CSM , 2N4393 , 2N4393CSM , IRF640 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 .
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