All MOSFET. MTBB0P10J3 Datasheet

 

MTBB0P10J3 Datasheet and Replacement


   Type Designator: MTBB0P10J3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.182 Ohm
   Package: TO-252
 

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MTBB0P10J3 Datasheet (PDF)

 ..1. Size:282K  cystek
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MTBB0P10J3

Spec. No. : C732J3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100VMTBB0P10J3 ID -16A205m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline TO-252(DPAK) MTBB0P

 6.1. Size:333K  cystek
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MTBB0P10J3

Spec. No. : C732L3 Issued Date : 2013.01.15 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10L3 BVDSS -100VID -2.6A171m (typ) RDSON@VGS=-10V, ID=-2A 186 (typ) RDSON@VGS=-4.5V, ID=-1A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equi

Datasheet: MTBA5C10AQ8 , MTBA5C10Q8 , MTBA5N10FP , MTBA5N10J3 , MTBA5N10Q8 , MTBA5N10V8 , MTBA5Q10Q8 , MTBA6C12J4 , IRF740 , MTBB0P10L3 , MTBB5B10Q8 , MTBB5N10L3 , MTBC7N10N3 , MTC1016S6R , MTC2402Q8 , MTC2590V8 , MTC2804Q8 .

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