MTBB0P10J3 Specs and Replacement

Type Designator: MTBB0P10J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.182 Ohm

Package: TO-252

MTBB0P10J3 substitution

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MTBB0P10J3 datasheet

 ..1. Size:282K  cystek
 mtbb0p10j3.pdf pdf_icon

MTBB0P10J3

Spec. No. C732J3 Issued Date 2009.07.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTBB0P10J3 ID -16A 205m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equivalent Circuit Outline TO-252(DPAK) MTBB0P... See More ⇒

 6.1. Size:333K  cystek
 mtbb0p10l3.pdf pdf_icon

MTBB0P10J3

Spec. No. C732L3 Issued Date 2013.01.15 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10L3 BVDSS -100V ID -2.6A 171m (typ) RDSON@VGS=-10V, ID=-2A 186 (typ) RDSON@VGS=-4.5V, ID=-1A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equi... See More ⇒

Detailed specifications: MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8, MTBA6C12J4, IRF740, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3, MTBC7N10N3, MTC1016S6R, MTC2402Q8, MTC2590V8, MTC2804Q8

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