MTBB5B10Q8 Specs and Replacement

Type Designator: MTBB5B10Q8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 365 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: SOP-8

MTBB5B10Q8 substitution

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MTBB5B10Q8 datasheet

 ..1. Size:356K  cystek
 mtbb5b10q8.pdf pdf_icon

MTBB5B10Q8

Spec. No. C590Q8 Issued Date 2010.10.08 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 Dual P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100V MTBB5B10Q8 ID -2.5A 250m RDSON(MAX) Description The MTBB5B10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost e... See More ⇒

 9.1. Size:282K  cystek
 mtbb5n10l3.pdf pdf_icon

MTBB5B10Q8

Spec. No. C593L3 Issued Date 2010.07.07 CYStech Electronics Corp. Revised Date 2011.12.09 Page No. 1/8 N -Channel Logic Level Enhancement Mode MOSFET BVDSS 100V MTBB5N10L3 ID 5A 125m (typ.) RDSON@VGS=10V, ID=2A Features 131m (typ.) RDSON@VGS=4.5V, ID=1A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equi... See More ⇒

Detailed specifications: MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, MTBA5N10V8, MTBA5Q10Q8, MTBA6C12J4, MTBB0P10J3, MTBB0P10L3, 20N60, MTBB5N10L3, MTBC7N10N3, MTC1016S6R, MTC2402Q8, MTC2590V8, MTC2804Q8, MTC3585G6, MTC3585N6

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