All MOSFET. MTBB5B10Q8 Datasheet

 

MTBB5B10Q8 Datasheet and Replacement


   Type Designator: MTBB5B10Q8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: SOP-8
 

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MTBB5B10Q8 Datasheet (PDF)

 ..1. Size:356K  cystek
 mtbb5b10q8.pdf pdf_icon

MTBB5B10Q8

Spec. No. : C590Q8 Issued Date : 2010.10.08 CYStech Electronics Corp.Revised Date : 2011.10.03 Page No. : 1/8 Dual P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100VMTBB5B10Q8 ID -2.5A 250m RDSON(MAX) Description The MTBB5B10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost e

 9.1. Size:282K  cystek
 mtbb5n10l3.pdf pdf_icon

MTBB5B10Q8

Spec. No. : C593L3 Issued Date : 2010.07.07 CYStech Electronics Corp.Revised Date : 2011.12.09 Page No. : 1/8 N -Channel Logic Level Enhancement Mode MOSFET BVDSS 100VMTBB5N10L3 ID 5A125m (typ.)RDSON@VGS=10V, ID=2A Features 131m (typ.)RDSON@VGS=4.5V, ID=1A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package Equi

Datasheet: MTBA5N10FP , MTBA5N10J3 , MTBA5N10Q8 , MTBA5N10V8 , MTBA5Q10Q8 , MTBA6C12J4 , MTBB0P10J3 , MTBB0P10L3 , 20N60 , MTBB5N10L3 , MTBC7N10N3 , MTC1016S6R , MTC2402Q8 , MTC2590V8 , MTC2804Q8 , MTC3585G6 , MTC3585N6 .

History: MTBB0P10J3

Keywords - MTBB5B10Q8 MOSFET datasheet

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