MTC4503Q8G Specs and Replacement

Type Designator: MTC4503Q8G

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9(6.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7(8) nS

Cossⓘ - Output Capacitance: 160(300) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.036) Ohm

Package: SOP-8

MTC4503Q8G substitution

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MTC4503Q8G datasheet

 ..1. Size:543K  cystek
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MTC4503Q8G

Spec. No. C384Q8 Issued Date 2010.12.10 CYStech Electronics Corp. Revised Date Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒

 5.1. Size:775K  cystek
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MTC4503Q8G

Spec. No. C384Q8 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2014.03.26 Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, ... See More ⇒

 7.1. Size:763K  cystek
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MTC4503Q8G

Spec. No. C384Q8 Issued Date 2015.01.06 CYStech Electronics Corp. Revised Date Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒

 7.2. Size:422K  cystek
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MTC4503Q8G

Spec. No. C384Q8 Issued Date 2012.04.30 CYStech Electronics Corp. Revised Date 2014.03.07 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC4503AQ8 BVDSS 30V -30V ID 11A -9.5A RDSON(typ.) @VGS=(-)10V 13m 21m RDSON(typ.) @VGS=(-)4.5V 20m 34m Description The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOS... See More ⇒

Detailed specifications: MTC2804Q8, MTC3585G6, MTC3585N6, MTC3586DFA6, MTC380Q8, MTC4501Q8, MTC4503AQ8, MTC4503Q8, IRF3710, MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8, MTC8402S6R, MTC8404V8, MTC8958G6, MTC8958Q8

Keywords - MTC4503Q8G MOSFET specs

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