MTC4503Q8G. Аналоги и основные параметры
Наименование производителя: MTC4503Q8G
Тип транзистора: MOSFET
Полярность: NP
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.9(6.3) A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7(8) ns
Cossⓘ - Выходная емкость: 160(300) pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028(0.036) Ohm
Тип корпуса: SOP-8
Аналог (замена) для MTC4503Q8G
- подборⓘ MOSFET транзистора по параметрам
MTC4503Q8G даташит
mtc4503q8g.pdf
Spec. No. C384Q8 Issued Date 2010.12.10 CYStech Electronics Corp. Revised Date Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8G Description The MTC4503Q8G consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtc4503q8.pdf
Spec. No. C384Q8 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2014.03.26 Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design,
mtc4503lq8.pdf
Spec. No. C384Q8 Issued Date 2015.01.06 CYStech Electronics Corp. Revised Date Page No. 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503LQ8 Description The MTC4503LQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtc4503aq8.pdf
Spec. No. C384Q8 Issued Date 2012.04.30 CYStech Electronics Corp. Revised Date 2014.03.07 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC4503AQ8 BVDSS 30V -30V ID 11A -9.5A RDSON(typ.) @VGS=(-)10V 13m 21m RDSON(typ.) @VGS=(-)4.5V 20m 34m Description The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOS
Другие IGBT... MTC2804Q8, MTC3585G6, MTC3585N6, MTC3586DFA6, MTC380Q8, MTC4501Q8, MTC4503AQ8, MTC4503Q8, IRF3710, MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8, MTC8402S6R, MTC8404V8, MTC8958G6, MTC8958Q8
History: TPC8063-H | TPC8061-H | AP6983GN2-HF
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