FSF9250D Specs and Replacement
Type Designator: FSF9250D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO254AA
FSF9250D substitution
FSF9250D datasheet
fsf9250.pdf
FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 15A, -200V, rDS(ON) = 0.290 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K ... See More ⇒
Detailed specifications: FSF250D , FSF250R , FSF254D , FSF254R , FSF450D , FSF450R , FSF9150D , FSF9150R , IRF740 , FSF9250R , FSJ055D , FSJ055R , FSJ160D , FSJ160R , FSJ260D , FSJ260R , FSJ264D .
History: 2SK3135
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