MTC8958G6 Specs and Replacement

Type Designator: MTC8958G6

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6(4.5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10(12) nS

Cossⓘ - Output Capacitance: 70(64) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018(0.041) Ohm

Package: TSOP-6

MTC8958G6 substitution

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MTC8958G6 datasheet

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 mtc8958g6.pdf pdf_icon

MTC8958G6

Spec. No. C839G6 Issued Date 2012.04.18 CYStech Electronics Corp. Revised Date 2014.05.30 Page No. 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC8958G6 BVDSS 30V -30V ID 6A(VGS=10V) -4.5A(VGS=-10 V) 18m (VGS=10V) 41m (VGS=-10V) RDSON(TYP.) 26m (VGS=4.5V) 60m (VGS=-4.5V) Features Simple drive requirement Low gate charge Low ... See More ⇒

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 mtc8958q8.pdf pdf_icon

MTC8958G6

Spec. No. C839Q8 Issued Date 2013.05.10 CYStech Electronics Corp. Revised Date 2014.03.27 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC8958Q8 BVDSS 30V -30V ID 7A -6A RDSON(MAX.) 25m 55m Description The MTC8958Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer ... See More ⇒

Detailed specifications: MTC4503Q8, MTC4503Q8G, MTC4505Q8, MTC4506J4, MTC4506Q8, MTC5806Q8, MTC8402S6R, MTC8404V8, 7N65, MTC8958Q8, MTD06N04Q8, MTD120C10KJ4, MTD120C10KQ8, MTD140P15J3, MTD30N10Q8, MTD55N10Q8, MTDA0N10J3

Keywords - MTC8958G6 MOSFET specs

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