All MOSFET. MTC8958G6 Datasheet

 

MTC8958G6 Datasheet and Replacement


   Type Designator: MTC8958G6
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6(4.5) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10(12) nS
   Cossⓘ - Output Capacitance: 70(64) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018(0.041) Ohm
   Package: TSOP-6
 

 MTC8958G6 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MTC8958G6 Datasheet (PDF)

 ..1. Size:427K  cystek
 mtc8958g6.pdf pdf_icon

MTC8958G6

Spec. No. : C839G6 Issued Date : 2012.04.18 CYStech Electronics Corp.Revised Date : 2014.05.30 Page No. : 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CHMTC8958G6 BVDSS 30V -30VID 6A(VGS=10V) -4.5A(VGS=-10 V) 18m(VGS=10V) 41m(VGS=-10V) RDSON(TYP.) 26m(VGS=4.5V) 60m(VGS=-4.5V)Features Simple drive requirement Low gate charge Low

 7.1. Size:450K  cystek
 mtc8958q8.pdf pdf_icon

MTC8958G6

Spec. No. : C839Q8 Issued Date : 2013.05.10 CYStech Electronics Corp.Revised Date : 2014.03.27 Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC8958Q8 BVDSS 30V -30VID 7A -6ARDSON(MAX.) 25m 55m Description The MTC8958Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer

Datasheet: MTC4503Q8 , MTC4503Q8G , MTC4505Q8 , MTC4506J4 , MTC4506Q8 , MTC5806Q8 , MTC8402S6R , MTC8404V8 , STP75NF75 , MTC8958Q8 , MTD06N04Q8 , MTD120C10KJ4 , MTD120C10KQ8 , MTD140P15J3 , MTD30N10Q8 , MTD55N10Q8 , MTDA0N10J3 .

History: WST3400 | MTC8404V8 | NTMFS5C673NLT1G | WTK4435 | NCEP01T15 | NCEP023N85 | SMG5403

Keywords - MTC8958G6 MOSFET datasheet

 MTC8958G6 cross reference
 MTC8958G6 equivalent finder
 MTC8958G6 lookup
 MTC8958G6 substitution
 MTC8958G6 replacement

 

 
Back to Top

 


 
.