MTDA0N10J3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTDA0N10J3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 5.5
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
TO-252
MTDA0N10J3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTDA0N10J3
Datasheet (PDF)
..1. Size:312K cystek
mtda0n10j3.pdf
Spec. No. : C870J3 Issued Date : 2012.07.26 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 100VMTDA0N10J3 ID 16A80m VGS=10V, ID=12A RDSON(TYP) 96m VGS=5V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit O
6.1. Size:356K cystek
mtda0n10l3.pdf
Spec. No. : C870L3 Issued Date : 2014.04.08 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTDA0N10L3ID 3.9ARDSON@VGS=10V, ID=3A 77m(typ) RDSON@VGS=5V, ID=2A 87m(typ) Description The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, rugge
9.1. Size:295K cystek
mtda0p10fp.pdf
Spec. No. : C733FP Issued Date : 2011.03.14 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100VMTDA0P10FP ID -22A120m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220FP MTDA0P10FP GGate DDrain S
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