MTDA0P10FP Specs and Replacement

Type Designator: MTDA0P10FP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 1683 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO-220FP

MTDA0P10FP substitution

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MTDA0P10FP datasheet

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 mtda0p10fp.pdf pdf_icon

MTDA0P10FP

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 mtda0n10l3.pdf pdf_icon

MTDA0P10FP

Spec. No. C870L3 Issued Date 2014.04.08 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTDA0N10L3 ID 3.9A RDSON@VGS=10V, ID=3A 77m (typ) RDSON@VGS=5V, ID=2A 87m (typ) Description The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, rugge... See More ⇒

 9.2. Size:312K  cystek
 mtda0n10j3.pdf pdf_icon

MTDA0P10FP

Spec. No. C870J3 Issued Date 2012.07.26 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 100V MTDA0N10J3 ID 16A 80m VGS=10V, ID=12A RDSON(TYP) 96m VGS=5V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit O... See More ⇒

Detailed specifications: MTD06N04Q8, MTD120C10KJ4, MTD120C10KQ8, MTD140P15J3, MTD30N10Q8, MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, IRLB4132, MTDA4N20J3, MTDE5P10N3, MTDK1S6R, MTDK3S6R, MTDK5S6R, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R

Keywords - MTDA0P10FP MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.