All MOSFET. MTDA4N20J3 Datasheet

 

MTDA4N20J3 Datasheet and Replacement


   Type Designator: MTDA4N20J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-252
 

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MTDA4N20J3 Datasheet (PDF)

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MTDA4N20J3

Spec. No. : C786J3 Issued Date : 2010.12.20 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTDA4N20J3 ID 15A140m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTDA4N20J3 TO-252 G D S GGate DDrain S

Datasheet: MTD120C10KJ4 , MTD120C10KQ8 , MTD140P15J3 , MTD30N10Q8 , MTD55N10Q8 , MTDA0N10J3 , MTDA0N10L3 , MTDA0P10FP , AO3400 , MTDE5P10N3 , MTDK1S6R , MTDK3S6R , MTDK5S6R , MTDN1034C6 , MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 .

History: MTC380Q8 | KND4820B | RU60E25R | NCEP039N10M | SSM9926GEO | SJMN250R80ZP | IPI65R660CFD

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