All MOSFET. MTDE5P10N3 Datasheet

 

MTDE5P10N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTDE5P10N3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 1.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.7 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-23

 MTDE5P10N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTDE5P10N3 Datasheet (PDF)

 ..1. Size:601K  cystek
 mtde5p10n3.pdf

MTDE5P10N3 MTDE5P10N3

Spec. No. : C885N3 Issued Date : 2014.08.14 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -100V MTDE5P10N3 ID -1.1A RDS(ON)@VGS=-10V, ID=-1A 450m(typ) RDS(ON)@VGS=-6V, ID=-1A 472m(typ) Features Advanced trench process technology High density cell design for ultra low on resistance Low gate charge

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDD86581-F085 | BUK9MRR-65PKK

 

 
Back to Top