MTDE5P10N3 Specs and Replacement

Type Designator: MTDE5P10N3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: SOT-23

MTDE5P10N3 substitution

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MTDE5P10N3 datasheet

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MTDE5P10N3

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Detailed specifications: MTD120C10KQ8, MTD140P15J3, MTD30N10Q8, MTD55N10Q8, MTDA0N10J3, MTDA0N10L3, MTDA0P10FP, MTDA4N20J3, K3569, MTDK1S6R, MTDK3S6R, MTDK5S6R, MTDN1034C6, MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, MTDN4228Q8

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs