All MOSFET. MTDN8233X6 Datasheet

 

MTDN8233X6 Datasheet and Replacement


   Type Designator: MTDN8233X6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TDFN2X3-6L
 

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MTDN8233X6 Datasheet (PDF)

 ..1. Size:380K  cystek
mtdn8233x6.pdf pdf_icon

MTDN8233X6

Spec. No. : C911X6 Issued Date : 2013.07.12 CYStech Electronics Corp.Revised Date : 2013.11.28 Page No. : 1/9 Dual N -Channel Enhancement Mode MOSFET BVDSS 20VMTDN8233X6 ID VGS=4.5V 11A6.0m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 6.0m VGS=3.7V, ID=5.5A RDSON (TYP.) 6.2 m VGS=3.1V, ID=5.5A 6.7 m VGS=2.5V, ID=5.5A 7.8 m Description The MTDN8233X6 consi

 6.1. Size:358K  cystek
mtdn8233cdv8.pdf pdf_icon

MTDN8233X6

Spec. No. : C911V8 Issued Date : 2013.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MOSFET BVDSS 20VMTDN8233CDV8 ID VGS=4.5V 10A8.1m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 8.4m VGS=3.7V, ID=5.5A RDSON (TYP.) 8.6 m Features VGS=3.1V, ID=5.5A 9.4 m Simple drive requirement VGS=2.5V, ID=5.5A 10

 9.1. Size:468K  cystek
mtdn8810at8.pdf pdf_icon

MTDN8233X6

Spec. No. : C779T8 Issued Date : 2014.04.15 CYStech Electronics Corp.Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810AT8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Features 1.8V drive available Low on-resistance Fast switching speed Pb-free lead pl

 9.2. Size:416K  cystek
mtdn8810t8.pdf pdf_icon

MTDN8233X6

Spec. No. : C582T8 Issued Date : 2013.07.25 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810T8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Description The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer w

Datasheet: MTDN138ZS6R , MTDN3018S6R , MTDN3154C6 , MTDN4228Q8 , MTDN5820Z6 , MTDN6303S6R , MTDN7002ZHS6R , MTDN8233CDV8 , AO4407 , MTDN8810AT8 , MTDN8810T8 , MTDN9922Q8 , MTDN9926Q8 , MTDN9946Q8 , MTDN9971Q8 , MTDN9973Q8 , MTDNK2N6 .

History: SFS9630 | SI4916DY | KTK5132E | IRFHM8337 | WTK9410 | SMF2N65

Keywords - MTDN8233X6 MOSFET datasheet

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