MTDN8233X6 Specs and Replacement

Type Designator: MTDN8233X6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TDFN2X3-6L

MTDN8233X6 substitution

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MTDN8233X6 datasheet

 ..1. Size:380K  cystek
 mtdn8233x6.pdf pdf_icon

MTDN8233X6

Spec. No. C911X6 Issued Date 2013.07.12 CYStech Electronics Corp. Revised Date 2013.11.28 Page No. 1/9 Dual N -Channel Enhancement Mode MOSFET BVDSS 20V MTDN8233X6 ID VGS=4.5V 11A 6.0m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 6.0m VGS=3.7V, ID=5.5A RDSON (TYP.) 6.2 m VGS=3.1V, ID=5.5A 6.7 m VGS=2.5V, ID=5.5A 7.8 m Description The MTDN8233X6 consi... See More ⇒

 6.1. Size:358K  cystek
 mtdn8233cdv8.pdf pdf_icon

MTDN8233X6

Spec. No. C911V8 Issued Date 2013.12.02 CYStech Electronics Corp. Revised Date Page No. 1/9 Common Drain Dual N -Channel Enhancement Mode MOSFET BVDSS 20V MTDN8233CDV8 ID VGS=4.5V 10A 8.1m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 8.4m VGS=3.7V, ID=5.5A RDSON (TYP.) 8.6 m Features VGS=3.1V, ID=5.5A 9.4 m Simple drive requirement VGS=2.5V, ID=5.5A 10... See More ⇒

 9.1. Size:468K  cystek
 mtdn8810at8.pdf pdf_icon

MTDN8233X6

Spec. No. C779T8 Issued Date 2014.04.15 CYStech Electronics Corp. Revised Date Page No. 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20V MTDN8810AT8 ID 5A RDSON@VGS=4.5V, ID=5A 17.5m (typ) RDSON@VGS=2.5V,ID=2.6A 25m (typ) RDSON@VGS=1.8V,ID=1A 41m (typ) Features 1.8V drive available Low on-resistance Fast switching speed Pb-free lead pl... See More ⇒

 9.2. Size:416K  cystek
 mtdn8810t8.pdf pdf_icon

MTDN8233X6

Spec. No. C582T8 Issued Date 2013.07.25 CYStech Electronics Corp. Revised Date 2013.09.03 Page No. 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20V MTDN8810T8 ID 5A RDSON@VGS=4.5V, ID=5A 17.5m (typ) RDSON@VGS=2.5V,ID=2.6A 25m (typ) RDSON@VGS=1.8V,ID=1A 41m (typ) Description The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer w... See More ⇒

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Detailed specifications: MTDN138ZS6R, MTDN3018S6R, MTDN3154C6, MTDN4228Q8, MTDN5820Z6, MTDN6303S6R, MTDN7002ZHS6R, MTDN8233CDV8, IRF530, MTDN8810AT8, MTDN8810T8, MTDN9922Q8, MTDN9926Q8, MTDN9946Q8, MTDN9971Q8, MTDN9973Q8, MTDNK2N6

Keywords - MTDN8233X6 MOSFET specs

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