MTDN8233X6 - параметры транзистора MOSFET, его аналоги, datasheet

MTDN8233X6 Datasheet (PDF)

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Spec. No. : C911X6 Issued Date : 2013.07.12 CYStech Electronics Corp.Revised Date : 2013.11.28 Page No. : 1/9 Dual N -Channel Enhancement Mode MOSFET BVDSS 20VMTDN8233X6 ID VGS=4.5V 11A6.0m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 6.0m VGS=3.7V, ID=5.5A RDSON (TYP.) 6.2 m VGS=3.1V, ID=5.5A 6.7 m VGS=2.5V, ID=5.5A 7.8 m Description The MTDN8233X6 consi

6.1. Size:358K cystek
mtdn8233cdv8.pdf pdf_icon

Spec. No. : C911V8 Issued Date : 2013.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MOSFET BVDSS 20VMTDN8233CDV8 ID VGS=4.5V 10A8.1m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 8.4m VGS=3.7V, ID=5.5A RDSON (TYP.) 8.6 m Features VGS=3.1V, ID=5.5A 9.4 m Simple drive requirement VGS=2.5V, ID=5.5A 10

9.1. Size:468K cystek
mtdn8810at8.pdf pdf_icon

Spec. No. : C779T8 Issued Date : 2014.04.15 CYStech Electronics Corp.Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810AT8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Features 1.8V drive available Low on-resistance Fast switching speed Pb-free lead pl

9.2. Size:416K cystek
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Spec. No. : C582T8 Issued Date : 2013.07.25 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810T8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Description The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer w

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