All MOSFET. MTDP4953Q8 Datasheet

 

MTDP4953Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTDP4953Q8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOP-8

 MTDP4953Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTDP4953Q8 Datasheet (PDF)

 ..1. Size:323K  cystek
 mtdp4953q8.pdf

MTDP4953Q8 MTDP4953Q8

Spec. No. : C402Q8 Issued Date : 2006.06.15 CYStech Electronics Corp.Revised Date :2014.06.10 Page No. : 1/8 Dual P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTDP4953Q8 ID -5.3ARDSON@VGS=-10V, ID=-5A 50m(typ) RDSON@VGS=-4.5V, ID=-4A 75m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and

 6.1. Size:564K  cystek
 mtdp4953bdyq8.pdf

MTDP4953Q8 MTDP4953Q8

Spec. No. : C401Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SO

Datasheet: MTDN9922Q8 , MTDN9926Q8 , MTDN9946Q8 , MTDN9971Q8 , MTDN9973Q8 , MTDNK2N6 , MTDP2004S6R , MTDP4953BDYQ8 , IRFZ46N , MTDP9620T8 , MTE010N10E3 , MTE010N10FP , MTE040N20P3 , MTE05N08E3 , MTE05N10E3 , MTE130N20FP , MTE130N20KE3 .

History: IXTH4N150 | RU60E5D

 

 
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