All MOSFET. MTDP9620T8 Datasheet

 

MTDP9620T8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTDP9620T8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 6.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.4 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 264 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8

 MTDP9620T8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTDP9620T8 Datasheet (PDF)

 ..1. Size:471K  cystek
 mtdp9620t8.pdf

MTDP9620T8 MTDP9620T8

Spec. No. : C573Q8 Issued Date : 2012.03.02 CYStech Electronics Corp.Revised Date : 2014.04.28 Page No. : 1/8 Dual P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20VMTDP9620T8 ID -6.3ARDSON@VGS=-4.5V, ID=-4.8A 20m(typ)RDSON@VGS=-2.5V,ID=-4.2A 26m(typ)RDSON@VGS=-1.8V,ID=-3.5A 34m(typ)Features 1.8V drive available Low on-resistance Fast switching s

 6.1. Size:371K  cystek
 mtdp9620q8.pdf

MTDP9620T8 MTDP9620T8

Spec. No. : C573Q8 Issued Date : 2015.02.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Dual P-Channel Enhancement Mode Power MOSFET MTDP9620Q8 BVDSS -20V ID@VGS=-4.5V, TA=25C -5.2A -8.8A ID@VGS=-4.5V, TC=25C Features RDSON@VGS=-4.5V, ID=-6.5A 16.4m(typ) Simple drive requirement RDSON@VGS=-2.5V, ID=-4.2A 19.8m(typ) Low on-resistance RDSON

 9.1. Size:372K  cystek
 mtdp9933kq8.pdf

MTDP9620T8 MTDP9620T8

Spec. No. : C589Q8 Issued Date : 2015.02.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Dual P-Channel Enhancement Mode Power MOSFET MTDP9933KQ8 BVDSS -20V ID@VGS=-4.5V, TA=25C -4.5A -7.5A ID@VGS=-4.5V, TC=25C Features RDSON@VGS=-4.5V, ID=-4A 28 m(typ) Simple drive requirement RDSON@VGS=-2.5V, ID=-4A 36 m(typ) Low on-resistance RDSON@VG

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History: IXTM10N100

 

 
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