MTDP9620T8 Specs and Replacement
Type Designator: MTDP9620T8
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 264 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSSOP-8
MTDP9620T8 substitution
- MOSFET ⓘ Cross-Reference Search
MTDP9620T8 datasheet
mtdp9620t8.pdf
Spec. No. C573Q8 Issued Date 2012.03.02 CYStech Electronics Corp. Revised Date 2014.04.28 Page No. 1/8 Dual P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTDP9620T8 ID -6.3A RDSON@VGS=-4.5V, ID=-4.8A 20m (typ) RDSON@VGS=-2.5V,ID=-4.2A 26m (typ) RDSON@VGS=-1.8V,ID=-3.5A 34m (typ) Features 1.8V drive available Low on-resistance Fast switching s... See More ⇒
mtdp9620q8.pdf
Spec. No. C573Q8 Issued Date 2015.02.02 CYStech Electronics Corp. Revised Date Page No. 1/9 Dual P-Channel Enhancement Mode Power MOSFET MTDP9620Q8 BVDSS -20V ID@VGS=-4.5V, TA=25 C -5.2A -8.8A ID@VGS=-4.5V, TC=25 C Features RDSON@VGS=-4.5V, ID=-6.5A 16.4m (typ) Simple drive requirement RDSON@VGS=-2.5V, ID=-4.2A 19.8m (typ) Low on-resistance RDSON... See More ⇒
mtdp9933kq8.pdf
Spec. No. C589Q8 Issued Date 2015.02.24 CYStech Electronics Corp. Revised Date Page No. 1/9 Dual P-Channel Enhancement Mode Power MOSFET MTDP9933KQ8 BVDSS -20V ID@VGS=-4.5V, TA=25 C -4.5A -7.5A ID@VGS=-4.5V, TC=25 C Features RDSON@VGS=-4.5V, ID=-4A 28 m (typ) Simple drive requirement RDSON@VGS=-2.5V, ID=-4A 36 m (typ) Low on-resistance RDSON@VG... See More ⇒
Detailed specifications: MTDN9926Q8, MTDN9946Q8, MTDN9971Q8, MTDN9973Q8, MTDNK2N6, MTDP2004S6R, MTDP4953BDYQ8, MTDP4953Q8, 2SK3568, MTE010N10E3, MTE010N10FP, MTE040N20P3, MTE05N08E3, MTE05N10E3, MTE130N20FP, MTE130N20KE3, MTE130N20KF3
Keywords - MTDP9620T8 MOSFET specs
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