All MOSFET. MTE010N10FP Datasheet

 

MTE010N10FP MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTE010N10FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: TO-220FP

 MTE010N10FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTE010N10FP Datasheet (PDF)

 ..1. Size:296K  cystek
 mte010n10fp.pdf

MTE010N10FP MTE010N10FP

Spec. No. : C944FP Issued Date : 2014.01.14 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTE010N10FP ID @ VGS=10V 35A9.9m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 10.5m Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

 5.1. Size:278K  cystek
 mte010n10e3.pdf

MTE010N10FP MTE010N10FP

Spec. No. : C944E3 Issued Date : 2013.11.12 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTE010N10E3 ID 70A9.6m RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 10.1m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AFN3484 | FQPF5P20 | BUK9M7R2-40E | MTBA5N10V8

 

 
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