MTE010N10FP Specs and Replacement
Type Designator: MTE010N10FP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
Package: TO-220FP
MTE010N10FP substitution
- MOSFET ⓘ Cross-Reference Search
MTE010N10FP datasheet
mte010n10fp.pdf
Spec. No. C944FP Issued Date 2014.01.14 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE010N10FP ID @ VGS=10V 35A 9.9m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 10.5m Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ... See More ⇒
mte010n10e3.pdf
Spec. No. C944E3 Issued Date 2013.11.12 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE010N10E3 ID 70A 9.6m RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 10.1m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic ... See More ⇒
jmte018n03a.pdf
30V, 190A, 1.9m N-channel Power Trench MOSFET JMTE018N03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 30 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power M... See More ⇒
Detailed specifications: MTDN9971Q8, MTDN9973Q8, MTDNK2N6, MTDP2004S6R, MTDP4953BDYQ8, MTDP4953Q8, MTDP9620T8, MTE010N10E3, 5N60, MTE040N20P3, MTE05N08E3, MTE05N10E3, MTE130N20FP, MTE130N20KE3, MTE130N20KF3, MTE130N20KFP, MTE130N20KJ3
Keywords - MTE010N10FP MOSFET specs
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MTE010N10FP replacement
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