All MOSFET. MTE130N20KE3 Datasheet

 

MTE130N20KE3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTE130N20KE3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.143 Ohm
   Package: TO-220

 MTE130N20KE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTE130N20KE3 Datasheet (PDF)

 ..1. Size:355K  cystek
 mte130n20ke3.pdf

MTE130N20KE3 MTE130N20KE3

Spec. No. : C952E3 Issued Date : 2013.12.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE130N20KE3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic RoHS compliant package

 4.1. Size:394K  cystek
 mte130n20kj3.pdf

MTE130N20KE3 MTE130N20KE3

Spec. No. : C952J3 Issued Date : 2014.02.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 BVDSS 200VID 18A142m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and

 4.2. Size:296K  cystek
 mte130n20kfp.pdf

MTE130N20KE3 MTE130N20KE3

Spec. No. : C952FP Issued Date : 2013.12.24 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETMTE130N20KFP BVDSS 200VID @ VGS=10V 17ARDS(ON)@VGS=10V, ID=9A 134 m(typ) Features ESD protected Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side in

 4.3. Size:337K  cystek
 mte130n20kf3.pdf

MTE130N20KE3 MTE130N20KE3

Spec. No. : C952F3 Issued Date : 2014.06.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KF3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and RoHS compli

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTMD6P02R2G | PK6D0BA | IXTH68N20 | IXTK100N25P | FCP099N60E | NTMD4820N | WFP2N60

 

 
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