MTE1K8N25J3 Specs and Replacement

Type Designator: MTE1K8N25J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V

Qg ⓘ - Total Gate Charge: 4.1 nC

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.71 Ohm

Package: TO-252

MTE1K8N25J3 substitution

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MTE1K8N25J3 datasheet

 ..1. Size:306K  cystek
 mte1k8n25j3.pdf pdf_icon

MTE1K8N25J3

Spec. No. C890J3 Issued Date 2012.12.14 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250V MTE1K8N25J3 ID 2.5A RDS(ON)@VGS=10V, ID=1A 1.71 (typ) RDS(ON)@VGS=6V, ID=1A 1.72 (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalen... See More ⇒

 5.1. Size:352K  cystek
 mte1k8n25km3.pdf pdf_icon

MTE1K8N25J3

Spec. No. C929M3 Issued Date 2013.08.11 CYStech Electronics Corp. Revised Date 2014.04.09 Page No. 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 250V MTE1K8N25KM3 ID 1A RDS(ON)@VGS=10V, ID=0.5A 1.33 (typ) RDS(ON)@VGS=10V, ID=1A 1.4 (typ) Features RDS(ON)@VGS=10V, ID=2A 1.63 (typ) Low Gate Charge RDS(ON)@VGS=6V, ID=0.5A 1.35 (typ) Simple Driv... See More ⇒

 5.2. Size:306K  cystek
 mte1k8n25kj3.pdf pdf_icon

MTE1K8N25J3

Spec. No. C929J3 Issued Date 2013.07.26 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250V MTE1K8N25KJ3 ID 2.5A RDS(ON)@VGS=10V, ID=2A 1.63 (typ) RDS(ON)@VGS=6V, ID=1A 1.41 (typ) Features Low gate charge Simple drive requirement Pb-free lead plating and halogen-free package ESD ... See More ⇒

 9.1. Size:311K  cystek
 mte1k0p15kn3.pdf pdf_icon

MTE1K8N25J3

Spec. No. C941N3 Issued Date 2013.11.22 CYStech Electronics Corp. Revised Date Page No. 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -150V ID -0.69A VGS=-10V, ID=-0.5A 1.01 MTE1K0P15KN3 RDSON(TYP) VGS=-6V, ID=-0.5A 1.11 Features ESD protected 2.5KV Advanced trench process technology High density cell design for ultra low on resistance Pb-free ... See More ⇒

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Detailed specifications: MTE05N10E3, MTE130N20FP, MTE130N20KE3, MTE130N20KF3, MTE130N20KFP, MTE130N20KJ3, MTE13N08J3, MTE1K0P15KN3, 8N60, MTE1K8N25KJ3, MTE1K8N25KM3, MTE20N10FP, MTE50N10FP, MTE50N15FP, MTE50N15J3, MTE50N15Q8, MTE65N15FP

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 MTE1K8N25J3 replacement

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