MTE1K8N25KJ3 Datasheet and Replacement. Cross Reference Search

MTE1K8N25KJ3 Datasheet (PDF)

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Spec. No. : C929J3 Issued Date : 2013.07.26 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTE1K8N25KJ3 ID 2.5ARDS(ON)@VGS=10V, ID=2A 1.63(typ) RDS(ON)@VGS=6V, ID=1A 1.41(typ) Features Low gate charge Simple drive requirement Pb-free lead plating and halogen-free package ESD

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Spec. No. : C929M3 Issued Date : 2013.08.11 CYStech Electronics Corp.Revised Date : 2014.04.09 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTE1K8N25KM3 ID 1ARDS(ON)@VGS=10V, ID=0.5A 1.33(typ) RDS(ON)@VGS=10V, ID=1A 1.4(typ) Features RDS(ON)@VGS=10V, ID=2A 1.63(typ) Low Gate Charge RDS(ON)@VGS=6V, ID=0.5A 1.35(typ) Simple Driv

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Spec. No. : C890J3 Issued Date : 2012.12.14 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTE1K8N25J3 ID 2.5ARDS(ON)@VGS=10V, ID=1A 1.71(typ) RDS(ON)@VGS=6V, ID=1A 1.72(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalen

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Spec. No. : C941N3 Issued Date : 2013.11.22 CYStech Electronics Corp.Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -150VID -0.69AVGS=-10V, ID=-0.5A 1.01 MTE1K0P15KN3 RDSON(TYP) VGS=-6V, ID=-0.5A 1.11 Features ESD protected 2.5KVAdvanced trench process technology High density cell design for ultra low on resistancePb-free

Datasheet: MTE130N20FP , MTE130N20KE3 , MTE130N20KF3 , MTE130N20KFP , MTE130N20KJ3 , MTE13N08J3 , MTE1K0P15KN3 , MTE1K8N25J3 , AO3401 , MTE1K8N25KM3 , MTE20N10FP , MTE50N10FP , MTE50N15FP , MTE50N15J3 , MTE50N15Q8 , MTE65N15FP , MTE65N15J3 .