MTE50N10FP Specs and Replacement

Type Designator: MTE50N10FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 114 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-220FP

MTE50N10FP substitution

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MTE50N10FP datasheet

 ..1. Size:297K  cystek
 mte50n10fp.pdf pdf_icon

MTE50N10FP

Spec. No. C893FP Issued Date 2013.05.27 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE50N10FP ID 23A RDS(ON)@VGS=10V, ID=15A 32 m (typ) RDS(ON)@VGS=6V, ID=10A 35 m (typ) Description The MTE50N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching... See More ⇒

 7.1. Size:382K  cystek
 mte50n15j3.pdf pdf_icon

MTE50N10FP

Spec. No. C931J3 Issued Date 2014.02.21 CYStech Electronics Corp. Revised Date Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTE50N15J3 ID 28A RDS(ON)@VGS=10V, ID=20A 39 m (typ) RDS(ON)@VGS=7V, ID=10A 39 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS com... See More ⇒

 7.2. Size:299K  cystek
 mte50n15fp.pdf pdf_icon

MTE50N10FP

Spec. No. C931FP Issued Date 2013.12.06 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTE50N15FP ID 24A RDS(ON)@VGS=10V, ID=20A 39 m (typ) RDS(ON)@VGS=7V, ID=10A 39 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulatin... See More ⇒

 7.3. Size:333K  cystek
 mte50n15q8.pdf pdf_icon

MTE50N10FP

Spec. No. C931Q8 Issued Date 2014.03.24 CYStech Electronics Corp. Revised Date 2014.06.24 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 150V MTE50N15Q8 ID @VGS=10V 7.7A RDS(ON)@VGS=10V, ID=5A 39 m (typ) RDS(ON)@VGS=8V, ID=5A 40 m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic ... See More ⇒

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Detailed specifications: MTE130N20KFP, MTE130N20KJ3, MTE13N08J3, MTE1K0P15KN3, MTE1K8N25J3, MTE1K8N25KJ3, MTE1K8N25KM3, MTE20N10FP, IRFB31N20D, MTE50N15FP, MTE50N15J3, MTE50N15Q8, MTE65N15FP, MTE65N15J3, MTE65N20F3, MTE65N20J3, MTEA0N10J3

Keywords - MTE50N10FP MOSFET specs

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