All MOSFET. MTE65N15J3 Datasheet

 

MTE65N15J3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTE65N15J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-252

 MTE65N15J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTE65N15J3 Datasheet (PDF)

 ..1. Size:310K  cystek
 mte65n15j3.pdf

MTE65N15J3 MTE65N15J3

Spec. No. : C873J3 Issued Date : 2012.12.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE65N15J3 ID 20ARDS(ON)@VGS=10V, ID=15A 55 m(typ) RDS(ON)@VGS=6V, ID=10A 61m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

 6.1. Size:344K  cystek
 mte65n15fp.pdf

MTE65N15J3 MTE65N15J3

Spec. No. : C873FP Issued Date : 2012.11.16 CYStech Electronics Corp.Revised Date : 2013.05.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 150VMTE65N15FP ID 15ARDS(ON)@VGS=10V, ID=15A 55 m(typ) RDS(ON)@VGS=6V, ID=10A 61m(typ) Description The MTE65N15FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fas

 8.1. Size:587K  1
 mte65n20h8.pdf

MTE65N15J3 MTE65N15J3

Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre

 8.2. Size:304K  cystek
 mte65n20j3.pdf

MTE65N15J3 MTE65N15J3

Spec. No. : C872J3 Issued Date : 2012.10.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20J3 ID 25A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Ou

 8.3. Size:282K  cystek
 mte65n20f3.pdf

MTE65N15J3 MTE65N15J3

Spec. No. : C872F3 Issued Date : 2012.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20F3 ID 33A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE65N20F3 TO-263

 8.4. Size:587K  cystek
 mte65n20h8.pdf

MTE65N15J3 MTE65N15J3

Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTH64N65X

 

 
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