MTEA6C15J4 Specs and Replacement

Type Designator: MTEA6C15J4

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.3(7.1) A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5(9) nS

Cossⓘ - Output Capacitance: 44(62) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.163(0.283) Ohm

Package: TO-252-4L

MTEA6C15J4 substitution

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MTEA6C15J4 datasheet

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 mtea6c15j4.pdf pdf_icon

MTEA6C15J4

Spec. No. C938J4 Issued Date 2013.12.04 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTEA6C15J4 BVDSS 150V -150V ID @VGS=10V(-10V) 9.3A -7.1A 163m 283m RDSON(TYP)@VGS=10V(-10V) Features 177m 308 RDSON(TYP)@VGS=6V(-6V) Low gate charge Simple drive requirement ESD pr... See More ⇒

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 mtea6c15q8.pdf pdf_icon

MTEA6C15J4

Spec. No. C938Q8 Issued Date 2013.09.23 CYStech Electronics Corp. Revised Date Page No. 1/12 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTEA6C15Q8 BVDSS 150V -150V ID 2.5A -2A RDSON(MAX.) 230m 365m Description The MTEA6C15Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best c... See More ⇒

Detailed specifications: MTE65N15FP, MTE65N15J3, MTE65N20F3, MTE65N20J3, MTEA0N10J3, MTEA0N10Q8, MTEA2N15L3, MTEA2N15Q8, EMB04N03H, MTEA6C15Q8, MTEB4N15J3, MTEB6N20J3, MTED6N25J3, MTED6N25KJ3, MTEE2N20FP, MTEE2N20J3, MTEF1P15L3

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