MTEA6C15J4 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTEA6C15J4
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 9.3(7.1) A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 5(9) nS
   Cossⓘ - Output Capacitance: 44(62) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.163(0.283) Ohm
   Package: TO-252-4L

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