MTEA6C15Q8 Specs and Replacement

Type Designator: MTEA6C15Q8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5(2) A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5(9) nS

Cossⓘ - Output Capacitance: 44(62) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.169(0.28) Ohm

Package: SOP-8

MTEA6C15Q8 substitution

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MTEA6C15Q8 datasheet

 ..1. Size:356K  cystek
 mtea6c15q8.pdf pdf_icon

MTEA6C15Q8

Spec. No. C938Q8 Issued Date 2013.09.23 CYStech Electronics Corp. Revised Date Page No. 1/12 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTEA6C15Q8 BVDSS 150V -150V ID 2.5A -2A RDSON(MAX.) 230m 365m Description The MTEA6C15Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best c... See More ⇒

 6.1. Size:355K  cystek
 mtea6c15j4.pdf pdf_icon

MTEA6C15Q8

Spec. No. C938J4 Issued Date 2013.12.04 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTEA6C15J4 BVDSS 150V -150V ID @VGS=10V(-10V) 9.3A -7.1A 163m 283m RDSON(TYP)@VGS=10V(-10V) Features 177m 308 RDSON(TYP)@VGS=6V(-6V) Low gate charge Simple drive requirement ESD pr... See More ⇒

Detailed specifications: MTE65N15J3, MTE65N20F3, MTE65N20J3, MTEA0N10J3, MTEA0N10Q8, MTEA2N15L3, MTEA2N15Q8, MTEA6C15J4, RU7088R, MTEB4N15J3, MTEB6N20J3, MTED6N25J3, MTED6N25KJ3, MTEE2N20FP, MTEE2N20J3, MTEF1P15L3, MTEF1P15N6

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