All MOSFET. MTEA6C15Q8 Datasheet

 

MTEA6C15Q8 Datasheet and Replacement


   Type Designator: MTEA6C15Q8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5(2) A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5(9) nS
   Cossⓘ - Output Capacitance: 44(62) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.169(0.28) Ohm
   Package: SOP-8
 

 MTEA6C15Q8 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MTEA6C15Q8 Datasheet (PDF)

 ..1. Size:356K  cystek
 mtea6c15q8.pdf pdf_icon

MTEA6C15Q8

Spec. No. : C938Q8 Issued Date : 2013.09.23 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CHMTEA6C15Q8 BVDSS 150V -150VID 2.5A -2ARDSON(MAX.) 230m 365m Description The MTEA6C15Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best c

 6.1. Size:355K  cystek
 mtea6c15j4.pdf pdf_icon

MTEA6C15Q8

Spec. No. : C938J4 Issued Date : 2013.12.04 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTEA6C15J4 BVDSS 150V -150VID @VGS=10V(-10V) 9.3A -7.1A163m 283m RDSON(TYP)@VGS=10V(-10V) Features 177m 308 RDSON(TYP)@VGS=6V(-6V) Low gate charge Simple drive requirement ESD pr

Datasheet: MTE65N15J3 , MTE65N20F3 , MTE65N20J3 , MTEA0N10J3 , MTEA0N10Q8 , MTEA2N15L3 , MTEA2N15Q8 , MTEA6C15J4 , MMD60R360PRH , MTEB4N15J3 , MTEB6N20J3 , MTED6N25J3 , MTED6N25KJ3 , MTEE2N20FP , MTEE2N20J3 , MTEF1P15L3 , MTEF1P15N6 .

History: MTEA2N15L3 | 16N50F | PJX8808

Keywords - MTEA6C15Q8 MOSFET datasheet

 MTEA6C15Q8 cross reference
 MTEA6C15Q8 equivalent finder
 MTEA6C15Q8 lookup
 MTEA6C15Q8 substitution
 MTEA6C15Q8 replacement

 

 
Back to Top

 


 
.