MTEE2N20J3 Specs and Replacement

Type Designator: MTEE2N20J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.59 Ohm

Package: TO-252

MTEE2N20J3 substitution

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MTEE2N20J3 datasheet

 ..1. Size:308K  cystek
 mtee2n20j3.pdf pdf_icon

MTEE2N20J3

Spec. No. C881J3 Issued Date 2012.12.14 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTEE2N20J3 ID 4.5A RDS(ON)@VGS=10V, ID=2.9A 650 m (typ) RDS(ON)@VGS=7V, ID=1A 590 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ... See More ⇒

 6.1. Size:342K  cystek
 mtee2n20fp.pdf pdf_icon

MTEE2N20J3

Spec. No. C881FP Issued Date 2012.11.20 CYStech Electronics Corp. Revised Date 2013.05.24 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTEE2N20FP ID 4A RDS(ON)@VGS=10V, ID=2.9A 650 m (typ) RDS(ON)@VGS=7V, ID=1A 590 m (typ) Description The MTEE2N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of f... See More ⇒

Detailed specifications: MTEA2N15Q8, MTEA6C15J4, MTEA6C15Q8, MTEB4N15J3, MTEB6N20J3, MTED6N25J3, MTED6N25KJ3, MTEE2N20FP, AO4468, MTEF1P15L3, MTEF1P15N6, MTEF1P15Q8, MTEF1P15V8, MTEH0N25J3, MTEJ0P20J3, MTEJ0P20L3, MTF50P02J3

Keywords - MTEE2N20J3 MOSFET specs

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