MTN04N03F3 Datasheet and Replacement
Type Designator: MTN04N03F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 620 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-263
MTN04N03F3 substitution
MTN04N03F3 Datasheet (PDF)
mtn04n03f3.pdf

Spec. No. : C807F3 Issued Date : 2009.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 25VID 80AMTN04N03F3 RDSON 4m Features Low On-resistance Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-263 MTN04N03F3
mtn0410l3.pdf

Spec. No. : C792L3 Issued Date : 2010.07.16 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N -Channel Logic Level Enhancement Mode MOSFET BVDSS 100VMTN0410L3 ID 3A280m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTN0410L3 SOT-223 D S D GGate DDrain G
mtn0401la3.pdf

Spec. No. : C403A3 Issued Date : 2006.07.14 CYStech Electronics Corp.Revised Date : 2006.08.14 Page No. : 1/6 N-CHANNEL MOSFET MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel
Datasheet: MTEH0N25J3 , MTEJ0P20J3 , MTEJ0P20L3 , MTF50P02J3 , MTN003N02Y3 , MTN003N03S3 , MTN0401LA3 , MTN0410L3 , IRF1404 , MTN1012C3 , MTN1012ZC3 , MTN10N40E3 , MTN10N60E3 , MTN10N60FP , MTN10N65EA , MTN10N65FP , MTN10N65FPG .
History: MTN0401LA3
Keywords - MTN04N03F3 MOSFET datasheet
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History: MTN0401LA3



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