FSJ9160R Specs and Replacement

Type Designator: FSJ9160R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO254AA

FSJ9160R substitution

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FSJ9160R datasheet

 7.1. Size:54K  intersil
 fsj9160.pdf pdf_icon

FSJ9160R

FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 44A, -100V, rDS(ON) = 0.055 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity t... See More ⇒

Detailed specifications: FSJ055R, FSJ160D, FSJ160R, FSJ260D, FSJ260R, FSJ264D, FSJ264R, FSJ9160D, IRFB4110, FSJ9260D, FSJ9260R, FSL110D, FSL110R, FSL130D, FSL130R, FSL13AOD, FSL13AOR

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