All MOSFET. FSJ9160R Datasheet

 

FSJ9160R Datasheet and Replacement


   Type Designator: FSJ9160R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO254AA
 

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FSJ9160R Datasheet (PDF)

 7.1. Size:54K  intersil
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FSJ9160R

FSJ9160D,FSJ9160R44A, -100V, 0.055 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 44A, -100V, rDS(ON) = 0.055 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity t

Datasheet: FSJ055R , FSJ160D , FSJ160R , FSJ260D , FSJ260R , FSJ264D , FSJ264R , FSJ9160D , IRF640N , FSJ9260D , FSJ9260R , FSL110D , FSL110R , FSL130D , FSL130R , FSL13AOD , FSL13AOR .

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