MTN15N50E3 Specs and Replacement
Type Designator: MTN15N50E3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220AB
MTN15N50E3 substitution
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MTN15N50E3 datasheet
mtn15n50e3.pdf
Spec. No. C717E3 Issued Date 2010.08.03 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.38 (typ.) MTN15N50E3 ID 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒
mtn15n50fp.pdf
Spec. No. C717FP Issued Date 2013.08.27 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.38 (typ.) MTN15N50FP ID 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒
mtn15n50f3.pdf
Spec. No. C717F3 Issued Date 2010.08.03 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.38 (typ.) MTN15N50F3 ID 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒
Detailed specifications: MTN12N65FP , MTN1308E3 , MTN1322S3 , MTN138KS3 , MTN138ZN3 , MTN13N50E3 , MTN13N50FP , MTN14N60FP , STP75NF75 , MTN15N50F3 , MTN15N50FP , MTN1634V8 , MTN18N20FP , MTN1N60A3 , MTN1N65I3 , MTN2002ZS3 , MTN2002ZW3 .
Keywords - MTN15N50E3 MOSFET specs
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MTN15N50E3 replacement
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