All MOSFET. MTN15N50E3 Datasheet

 

MTN15N50E3 Datasheet and Replacement


   Type Designator: MTN15N50E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220AB
 

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MTN15N50E3 Datasheet (PDF)

 ..1. Size:319K  cystek
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MTN15N50E3

Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 6.1. Size:282K  cystek
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MTN15N50E3

Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 6.2. Size:333K  cystek
 mtn15n50f3.pdf pdf_icon

MTN15N50E3

Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

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History: MTN15N50F3

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