MTN15N50FP
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN15N50FP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 51
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 45
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO-220FP
MTN15N50FP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN15N50FP
Datasheet (PDF)
..1. Size:282K cystek
mtn15n50fp.pdf
Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
5.1. Size:333K cystek
mtn15n50f3.pdf
Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
6.1. Size:319K cystek
mtn15n50e3.pdf
Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
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