MTN15N50FP Datasheet and Replacement
Type Designator: MTN15N50FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220FP
MTN15N50FP substitution
MTN15N50FP Datasheet (PDF)
mtn15n50fp.pdf

Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
mtn15n50f3.pdf

Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
mtn15n50e3.pdf

Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
Datasheet: MTN1322S3 , MTN138KS3 , MTN138ZN3 , MTN13N50E3 , MTN13N50FP , MTN14N60FP , MTN15N50E3 , MTN15N50F3 , IRF1010E , MTN1634V8 , MTN18N20FP , MTN1N60A3 , MTN1N65I3 , MTN2002ZS3 , MTN2002ZW3 , MTN20N20F3 , MTN20NF06J3 .
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