MTN1N65I3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTN1N65I3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9.5 Ohm
   Package: TO-251

MTN1N65I3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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