FSJ9260D Specs and Replacement

Type Designator: FSJ9260D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO254AA

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FSJ9260D datasheet

 7.1. Size:54K  intersil
 fsj9260.pdf pdf_icon

FSJ9260D

FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 27A, -200V, rDS(ON) = 0.130 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity t... See More ⇒

Detailed specifications: FSJ160D, FSJ160R, FSJ260D, FSJ260R, FSJ264D, FSJ264R, FSJ9160D, FSJ9160R, IRF640N, FSJ9260R, FSL110D, FSL110R, FSL130D, FSL130R, FSL13AOD, FSL13AOR, FSL230D

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