MTN2306AN3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTN2306AN3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.7 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT-23

MTN2306AN3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS