All MOSFET. MTN2306AN3 Datasheet

 

MTN2306AN3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTN2306AN3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.38 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 44 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: SOT-23

MTN2306AN3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN2306AN3 Datasheet (PDF)

1.1. mtn2306an3.pdf Size:310K _cystek

MTN2306AN3
MTN2306AN3

Spec. No. : C429N3 Issued Date : 2008.08.14 CYStech Electronics Corp. Revised Date :2012.03.29 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2306AN3 ID 5.5A 25mΩ VGS=10V, ID=5A 27mΩ RDSON(TYP) VGS=4.5V, ID=5A 30mΩ VGS=2.5V, ID=2.6A Features • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities •

2.1. mtn2306am3.pdf Size:299K _cystek

MTN2306AN3
MTN2306AN3

Spec. No. : C414M3 Issued Date : 2012.03.29 CYStech Electronics Corp. Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 30V ID 6.8A RDSON@VGS=10V, ID=5.8A 25mΩ(typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27mΩ(typ) Features • Low on-resistance • High speed switching • Low-voltage drive • Easily designed drive circuits • Pb-free lead plating and h

3.1. mtn2306zn3.pdf Size:283K _cystek

MTN2306AN3
MTN2306AN3

Spec. No. : C582N3 Issued Date : 2011.08.30 CYStech Electronics Corp. Revised Date : Page No. : 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20V MTN2306ZN3 ID 6A 28mΩ VGS=10V, ID=5A 30mΩ VGS=4.5V, ID=5A Features RDSON(MAX) • V =20V 40mΩ DS VGS=2.5V, ID=2.6A Ω@V =4.5V, I =5A R =30m GS D DS(ON) 60mΩ VGS=1.8V, ID=1A Ω@V =2.5V, I =2.6

3.2. mtn2306n3.pdf Size:308K _cystek

MTN2306AN3
MTN2306AN3

Spec. No. : C723N3 Issued Date : 2012.04.12 CYStech Electronics Corp. Revised Date : Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30V ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35mΩ RDSON(TYP)@VGS=4.5V, ID=2A 58mΩ Features • Lower gate charge • Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT

Datasheet: MTN20NF06J3 , MTN22N20J3 , MTN2300N3 , MTN2302N3 , MTN2302V3 , MTN2304M3 , MTN2304N3 , MTN2306AM3 , BSS138 , MTN2306N3 , MTN2306ZN3 , MTN2310M3 , MTN2310N3 , MTN2310V8 , MTN2328M3 , MTN2328N3 , MTN2342N3 .

 


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