MTN2510H8 Specs and Replacement

Type Designator: MTN2510H8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 236 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: DFN5X6

MTN2510H8 substitution

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MTN2510H8 datasheet

 ..1. Size:402K  cystek
 mtn2510h8.pdf pdf_icon

MTN2510H8

Spec. No. C741H8 Issued Date 2013.07.04 CYStech Electronics Corp. Revised Date 2013.09.14 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTN2510H8 ID 55A 17m VGS=10V, ID=30A RDSON(TYP) 21m VGS=6V, ID=20A Description The MTN2510H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ... See More ⇒

 7.1. Size:302K  cystek
 mtn2510le3.pdf pdf_icon

MTN2510H8

Spec. No. C741E3 Issued Date 2012.03.07 CYStech Electronics Corp. Revised Date Page No. 1/6 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN2510LE3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-220 MTN2510... See More ⇒

 7.2. Size:283K  cystek
 mtn2510lj3.pdf pdf_icon

MTN2510H8

Spec. No. C741J3 Issued Date 2009.09.21 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTN2510LJ3 ID 50A 19m VGS=10V, ID=30A RDSON(TYP) 20m VGS=5V, ID=20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic P... See More ⇒

 7.3. Size:283K  cystek
 mtn2510j3.pdf pdf_icon

MTN2510H8

Spec. No. C741J3 Issued Date 2009.09.21 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTN2510J3 ID 50A 19m VGS=10V, ID=30A RDSON(TYP) 23m VGS=6V, ID=20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb... See More ⇒

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Detailed specifications: MTN2310M3, MTN2310N3, MTN2310V8, MTN2328M3, MTN2328N3, MTN2342N3, MTN2510E3, MTN2510F3, IRFP250, MTN2510J3, MTN2510LE3, MTN2510LJ3, MTN2572F3, MTN2572FP, MTN2572H8, MTN2572J3, MTN2604G6

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.