All MOSFET. MTN2510LE3 Datasheet

 

MTN2510LE3 Datasheet and Replacement


   Type Designator: MTN2510LE3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220AB
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MTN2510LE3 Datasheet (PDF)

 ..1. Size:302K  cystek
 mtn2510le3.pdf pdf_icon

MTN2510LE3

Spec. No. : C741E3 Issued Date : 2012.03.07 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN2510LE3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-220 MTN2510

 6.1. Size:283K  cystek
 mtn2510lj3.pdf pdf_icon

MTN2510LE3

Spec. No. : C741J3 Issued Date : 2009.09.21 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510LJ3 ID 50A19m VGS=10V, ID=30A RDSON(TYP) 20m VGS=5V, ID=20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic P

 7.1. Size:402K  cystek
 mtn2510h8.pdf pdf_icon

MTN2510LE3

Spec. No. : C741H8 Issued Date : 2013.07.04 CYStech Electronics Corp.Revised Date : 2013.09.14 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510H8ID 55A17m VGS=10V, ID=30A RDSON(TYP) 21m VGS=6V, ID=20A Description The MTN2510H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching,

 7.2. Size:283K  cystek
 mtn2510j3.pdf pdf_icon

MTN2510LE3

Spec. No. : C741J3 Issued Date : 2009.09.21 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTN2510J3 ID 50A19m VGS=10V, ID=30A RDSON(TYP) 23m VGS=6V, ID=20A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb

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Keywords - MTN2510LE3 MOSFET datasheet

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