FSL110R PDF and Equivalents Search

 

FSL110R Specs and Replacement


   Type Designator: FSL110R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO205AF
 

 FSL110R substitution

   - MOSFET ⓘ Cross-Reference Search

 

FSL110R datasheet

 8.1. Size:66K  intersil
fsl110.pdf pdf_icon

FSL110R

FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Features Resistant, N-Channel Power MOSFETs 3.5A, 100V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil has developed a Total Dose series of Radiation Hardened MOSFETs specifically - Meets Pre-RAD Specifications to 100K RAD (Si) designed for commercial and military s... See More ⇒

 9.1. Size:107K  international rectifier
irfsl11n50a.pdf pdf_icon

FSL110R

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance ... See More ⇒

 9.2. Size:827K  international rectifier
irfsl11n50apbf.pdf pdf_icon

FSL110R

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number 91288 www.vishay.com 1 IRFSL11N50APbF Document Number 91288 www.vishay.com 2 IRFSL11N50APbF Document Number 91288 www.vishay.com 3 IRFSL11N50APbF Document Number 91288 www.vishay.com 4 IRFSL11N50APbF Document Number 91288 www.vishay.com 5 IRFSL11N50APbF Document Number 91288 www.vishay.com 6 IRFSL11... See More ⇒

 9.3. Size:111K  international rectifier
irfsl11n50.pdf pdf_icon

FSL110R

PD- 91847B IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low ... See More ⇒

Detailed specifications: FSJ260R , FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D , FSJ9260R , FSL110D , IRFB4227 , FSL130D , FSL130R , FSL13AOD , FSL13AOR , FSL230D , FSL230R , FSL234D , FSL234R .

Keywords - FSL110R MOSFET specs

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