FSL110R Datasheet. Specs and Replacement

Type Designator: FSL110R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO205AF

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FSL110R substitution

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FSL110R datasheet

 8.1. Size:66K  intersil
 fsl110.pdf pdf_icon

FSL110R

FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Features Resistant, N-Channel Power MOSFETs 3.5A, 100V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil has developed a Total Dose series of Radiation Hardened MOSFETs specifically - Meets Pre-RAD Specifications to 100K RAD (Si) designed for commercial and military s... See More ⇒

 9.1. Size:107K  international rectifier
 irfsl11n50a.pdf pdf_icon

FSL110R

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance ... See More ⇒

 9.2. Size:827K  international rectifier
 irfsl11n50apbf.pdf pdf_icon

FSL110R

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number 91288 www.vishay.com 1 IRFSL11N50APbF Document Number 91288 www.vishay.com 2 IRFSL11N50APbF Document Number 91288 www.vishay.com 3 IRFSL11N50APbF Document Number 91288 www.vishay.com 4 IRFSL11N50APbF Document Number 91288 www.vishay.com 5 IRFSL11N50APbF Document Number 91288 www.vishay.com 6 IRFSL11... See More ⇒

 9.3. Size:111K  international rectifier
 irfsl11n50.pdf pdf_icon

FSL110R

PD- 91847B IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low ... See More ⇒

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Detailed specifications: FSJ260R, FSJ264D, FSJ264R, FSJ9160D, FSJ9160R, FSJ9260D, FSJ9260R, FSL110D, AON6414A, FSL130D, FSL130R, FSL13AOD, FSL13AOR, FSL230D, FSL230R, FSL234D, FSL234R

Keywords - FSL110R MOSFET specs

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