All MOSFET. FSL110R Datasheet

 

FSL110R Datasheet and Replacement


   Type Designator: FSL110R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO205AF
 

 FSL110R substitution

   - MOSFET ⓘ Cross-Reference Search

 

FSL110R Datasheet (PDF)

 8.1. Size:66K  intersil
 fsl110.pdf pdf_icon

FSL110R

FSL110D, FSL110RData Sheet October 1998 File Number 4224.33.5A, 100V, 0.600 Ohm, Rad Hard, SEGR FeaturesResistant, N-Channel Power MOSFETs 3.5A, 100V, rDS(ON) = 0.600The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military s

 9.1. Size:107K  international rectifier
 irfsl11n50a.pdf pdf_icon

FSL110R

PD- 91847AIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance

 9.2. Size:827K  international rectifier
 irfsl11n50apbf.pdf pdf_icon

FSL110R

PD- 95231IRFSL11N50APbF Lead-Free04/29/04Document Number: 91288 www.vishay.com1IRFSL11N50APbFDocument Number: 91288 www.vishay.com2IRFSL11N50APbFDocument Number: 91288 www.vishay.com3IRFSL11N50APbFDocument Number: 91288 www.vishay.com4IRFSL11N50APbFDocument Number: 91288 www.vishay.com5IRFSL11N50APbFDocument Number: 91288 www.vishay.com6IRFSL11

 9.3. Size:111K  international rectifier
 irfsl11n50.pdf pdf_icon

FSL110R

PD- 91847BIRFSL11N50AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 500V Fast Switching Ease of ParalelingRDS(on) = 0.55 Simple Drive RequirementsGID = 11ASDescriptionThird Generation HEXFET Power MOSFETs from International Rectifierprovide the designer with the best combination of fast switching, ruggedizeddevice design, low

SHOW MORE

Datasheet: FSJ260R , FSJ264D , FSJ264R , FSJ9160D , FSJ9160R , FSJ9260D , FSJ9260R , FSL110D , IRFB4110 , FSL130D , FSL130R , FSL13AOD , FSL13AOR , FSL230D , FSL230R , FSL234D , FSL234R .

Keywords - FSL110R MOSFET datasheet

 FSL110R cross reference
 FSL110R equivalent finder
 FSL110R lookup
 FSL110R substitution
 FSL110R replacement

 

 
Back to Top

 


 
.