MTN2N60J3 Specs and Replacement

Type Designator: MTN2N60J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-252

MTN2N60J3 substitution

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MTN2N60J3 datasheet

 ..1. Size:357K  cystek
mtn2n60j3.pdf pdf_icon

MTN2N60J3

Spec. No. C435J3 Issued Date 2009.01.20 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 4.0 (typ.) MTN2N60J3 ID 2A Description The MTN2N60J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res... See More ⇒

 7.1. Size:284K  cystek
mtn2n60fp.pdf pdf_icon

MTN2N60J3

Spec. No. C435FP Issued Date 2009.01.19 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 4.1 typ. MTN2N60FP ID 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒

 7.2. Size:337K  cystek
mtn2n60i3.pdf pdf_icon

MTN2N60J3

Spec. No. C435I3 Issued Date 2009.01.20 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 4.0 (typ.) MTN2N60I3 ID 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res... See More ⇒

 8.1. Size:333K  cystek
mtn2n65j3.pdf pdf_icon

MTN2N60J3

Spec. No. C722J3 Issued Date 2010.08.06 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDSON(typ) 6.2 MTN2N65J3 ID 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package ... See More ⇒

Detailed specifications: MTN2510LJ3, MTN2572F3, MTN2572FP, MTN2572H8, MTN2572J3, MTN2604G6, MTN2N60FP, MTN2N60I3, IRF2807, MTN2N65AI3, MTN2N65FP, MTN2N65I3, MTN2N65J3, MTN2N70FP, MTN2N70I3, MTN3018S3, MTN3023J3

Keywords - MTN2N60J3 MOSFET specs

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