Справочник MOSFET. MTN2N60J3

 

MTN2N60J3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTN2N60J3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.5 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для MTN2N60J3

 

 

MTN2N60J3 Datasheet (PDF)

 ..1. Size:357K  cystek
 mtn2n60j3.pdf

MTN2N60J3 MTN2N60J3

Spec. No. : C435J3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60J3 ID : 2A Description The MTN2N60J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

 7.1. Size:284K  cystek
 mtn2n60fp.pdf

MTN2N60J3 MTN2N60J3

Spec. No. : C435FP Issued Date : 2009.01.19 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.1 typ. MTN2N60FP ID : 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.2. Size:337K  cystek
 mtn2n60i3.pdf

MTN2N60J3 MTN2N60J3

Spec. No. : C435I3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60I3 ID : 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

 8.1. Size:333K  cystek
 mtn2n65j3.pdf

MTN2N60J3 MTN2N60J3

Spec. No. : C722J3 Issued Date : 2010.08.06 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65J3 ID : 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package

 8.2. Size:336K  cystek
 mtn2n65i3.pdf

MTN2N60J3 MTN2N60J3

Spec. No. : C722I3 Issued Date : 2009.08.14 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65I3 ID : 1.8A Description The MTN2N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

 8.3. Size:273K  cystek
 mtn2n65fp.pdf

MTN2N60J3 MTN2N60J3

Spec. No. : C722FP Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date :2012.11.08 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 5.8 (typ.) MTN2N65FP ID : 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 8.4. Size:337K  cystek
 mtn2n65ai3.pdf

MTN2N60J3 MTN2N60J3

Spec. No. : C799I3 Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ.) : 5.0 MTN2N65AI3 ID : 2A Description The MTN2N65AI3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SIR166DP

 

 
Back to Top