MTN3018S3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN3018S3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.115
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 9.3
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.3
Ohm
Package:
SOT-323
MTN3018S3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN3018S3
Datasheet (PDF)
..1. Size:261K cystek
mtn3018s3.pdf 
Spec. No. : C320S3-R Issued Date : 2007.11.29 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel
9.1. Size:307K cystek
mtn303kn3.pdf
Spec. No. : C814N3 Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2012.08.27 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN303KN3 ID 850mARDSON@VGS=4.5V, ID=600mA 300m(typ) RDSON@VGS=2.5V,ID=400mA 450m(typ) RDSON@VGS=1.8V,ID=350mA 870m(typ) Features Simple drive requirement Small package outline Pb-free packag
9.2. Size:563K cystek
mtn3055j3.pdf
Spec. No. : C390J3 Issued Date : 2007.06.12 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VID 15AMTN3055J3 RDSON 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic RoHS compliant package Symbol Outline TO-252 MTN3055J3GGate G D S D
9.3. Size:349K cystek
mtn3055m3.pdf
Spec. No. : C390M3 Issued Date : 2007.09.19 CYStech Electronics Corp.Revised Date : 2009.12.03 Page No. : 1/6 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VID 6AMTN3055M3 RDSON(MAX) 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free package Symbol Outline MTN3055M3 SOT-89 D G D S GGate S
9.4. Size:290K cystek
mtn3055l3.pdf
Spec. No. : C390L3 Issued Date : 2010.10.05 CYStech Electronics Corp. Revised Date : 2012.08.20 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN3055L3 ID 8.3A19m (typ) RDSON@VGS=10V, ID=4A 25m (typ) RDSON@VGS=4.5V, ID=3A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating p
9.5. Size:390K cystek
mtn3023j3.pdf
Spec. No. : C737J3 Issued Date : 2011.11.22 CYStech Electronics Corp.Revised Date : 2014.03.14 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTN3023J3 ID 30AVGS=10V, ID=20A 14m RDSON(TYP) Features VGS=4.5V, ID=10A 21m Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent C
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