MTN3055L3 Specs and Replacement

Type Designator: MTN3055L3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SOT-223

MTN3055L3 substitution

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MTN3055L3 datasheet

 ..1. Size:290K  cystek
 mtn3055l3.pdf pdf_icon

MTN3055L3

Spec. No. C390L3 Issued Date 2010.10.05 CYStech Electronics Corp. Revised Date 2012.08.20 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3055L3 ID 8.3A 19m (typ) RDSON@VGS=10V, ID=4A 25m (typ) RDSON@VGS=4.5V, ID=3A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating p... See More ⇒

 7.1. Size:563K  cystek
 mtn3055j3.pdf pdf_icon

MTN3055L3

Spec. No. C390J3 Issued Date 2007.06.12 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30V ID 15A MTN3055J3 RDSON 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic RoHS compliant package Symbol Outline TO-252 MTN3055J3 G Gate G D S D ... See More ⇒

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 mtn3055m3.pdf pdf_icon

MTN3055L3

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 mtn303kn3.pdf pdf_icon

MTN3055L3

Spec. No. C814N3 Issued Date 2012.05.15 CYStech Electronics Corp. Revised Date 2012.08.27 Page No. 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN303KN3 ID 850mA RDSON@VGS=4.5V, ID=600mA 300m (typ) RDSON@VGS=2.5V,ID=400mA 450m (typ) RDSON@VGS=1.8V,ID=350mA 870m (typ) Features Simple drive requirement Small package outline Pb-free packag... See More ⇒

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Detailed specifications: MTN2N65I3, MTN2N65J3, MTN2N70FP, MTN2N70I3, MTN3018S3, MTN3023J3, MTN303KN3, MTN3055J3, 7N60, MTN3055M3, MTN3205E3, MTN3207E3, MTN3207F3, MTN3400N3, MTN3410F3, MTN3410J3, MTN3418BN3

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